november 2005 1/10 10 ST8812FP high voltage fast-switching npn power transistor features high voltage capability very high switching speed tight hfe control large r.b.s.o.a. fully insulated package u.l. compliant for easy mounting applications switch mode power supplies for crt tv description the ST8812FP is manufactured using latest multi epitaxial planar technology with high voltage capability. it shows wi de r.b.s.o.a. and high switching speed thanks to its cellular emitter structure with planar edge termination and deep base diffusion. internal schematic diagram to-220fp www.st.com order codes part number marking package packing ST8812FP ST8812FP to-220fp tube rev.1
1 electrical ratings ST8812FP 2/10 1 electrical ratings table 1. absolute maximum rating table 2. thermal data symbol parameter value unit v cbo collector-base voltage (i e = 0) 1150 v v ceo collector-emitter voltage (i b = 0) 600 v v ebo emitte-base voltage (i c = 0) 15 v i c collector current 7 a i cm collector peak current (t p < 5ms) 12 a i b base current 4 a p tot total dissipation at t c = 25c 36 w v isol insulation withstand voltage (rms) from all three leads to external heatsink 1500 v t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case thermal resistance junction-case __________________ __ max 3.47 c/w
ST8812FP 2 electrical characteristics 3/10 2 electrical characteristics (t case = 25c; unless otherwise specified) table 3. electrical characteristics note: 1 pulsed duration = 300 s, duty cycle 1.5%. symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1150v v ce = 1150v t c = 125c 1 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 14v 1ma v ceo(sus) note: 1 collector-emitter sustaining voltage (i b = 0) i c = 100ma 600 v v ce(sat) note: 1 collector-emitter saturation voltage i c = 4a _____ i b = 0.8a i c = 4a ___ __ i b = 1.2a 3 1.5 v v v be(sat) note: 1 base-emitter saturation voltage i c = 4a ____ _ i b = 0.8a 1.3 v h fe dc current gain i c = 1a _____ v ce = 5v i c = 5a _____ v ce = 1v i c = 5a _____ v ce = 5v 4.5 25 5 9 t s t f inductive load storage time fall time i c = 4a ____ _ r bb = 0 v clamp = 480v v be(off) = -5v i b1 = 0.8a _ l c = 220 h (see figure 8 ) 1 60 1.6 120 s ns
2 electrical characteristics ST8812FP 4/10 2.1 typical characteristicstest circuit figure 1. dc current gain figure 2. dc current gain figure 3. collector emitter saturation voltage figure 4. base emitter saturation voltage figure 5. inductive load storage time figure 6. inductive load fall time
ST8812FP 2 electrical characteristics 5/10 figure 7. reverse biased s.o.a.
2 electrical characteristics ST8812FP 6/10 figure 8. inductive load switching test circuit
ST8812FP 3 package mechanical data 7/10 3 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack ? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com.
3 package mechanical data ST8812FP 8/10 l2 a b d e h g l6 f l3 g 1 123 f 2 f 1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
ST8812FP 4 revision history 9/10 4 revision history date revision changes 17-nov-2005 1 initial release.
4 revision history ST8812FP 10/10 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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